STW9NB90 n-channel 900v - 0.85 w - 9.7a - to-247 powermesh ? mosfet n typical r ds(on) = 0.85 w n extremely high dv/dt capability n 30v gate to source voltage rating n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process, stmicroelectronics has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprietary edge termination structure, gives the lowest rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive ? internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 900 v v dgr drain- gate voltage (r gs = 20 k w ) 900 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 9.7 a i d drain current (continuous) at t c = 100 o c6a i dm ( ) drain current (pulsed) 38 a p tot total dissipation at t c = 25 o c 190 w derating factor 1.52 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area (1) i sd 9.7a, di/dt 200a/ m s, v dd v (br)dss , tj t jmax type v dss r ds(on) i d STW9NB90 900 v < 1 w 9.7 a july 1999 1 2 3 to-247 1/8
thermal data r thj-case thermal resistance junction-case max 0.66 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 9.7 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 600 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 900 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 50 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10 v i d = 4.8 a 0.85 1 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 9.7 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 4.8 a 8.8 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 2800 290 25 pf pf pf STW9NB90 2/8
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 450 v i d = 4.5 a r g = 4.7 w v gs = 10 v 30 13 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 720 v i d = 9 a v gs = 10 v r g = 4.7 w v gs = 10 v 64 16 26 90 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 720 v i d = 9 a r g = 4.7 w v gs = 10 v 26 26 35 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 9.7 38 a a v sd ( * ) forward on voltage i sd = 9.7 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c 1000 11 23 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area thermal impedance STW9NB90 3/8
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STW9NB90 4/8
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STW9NB90 5/8
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STW9NB90 6/8
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data STW9NB90 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com . STW9NB90 8/8
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